发明名称 |
High-voltage metal-oxide-semiconductor device |
摘要 |
A high-voltage MOS transistor includes a gate overlying an active area of a semiconductor substrate; a drain doping region pulled back away from an edge of the gate by a distance L; a first lightly doped region between the gate and the drain doping region; a source doping region in a first ion well; and a second lightly doped region between the gate and the source doping region.
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申请公布号 |
US8587056(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201213419443 |
申请日期 |
2012.03.14 |
申请人 |
LEE MING-CHENG;CHENG TAO;YANG MING-TZONG;MEDIATEK INC. |
发明人 |
LEE MING-CHENG;CHENG TAO;YANG MING-TZONG |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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