A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.
申请公布号
US8586959(B2)
申请公布日期
2013.11.19
申请号
US20100769557
申请日期
2010.04.28
申请人
PICKETT MATTHEW D.;YANG JIANHUA;STRUKOV DMITRI;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.