| 摘要 |
In a method of manufacturing a capacitor, a lower electrode of a capacitor is formed on or above a semiconductor substrate. An ozone gas and an inert gas are simultaneously introduced for a predetermined period into a reaction chamber of an atomic layer deposition apparatus in which the semiconductor substrate is set. Then, the ozone gas is exhausted from the reaction chamber by stopping the introduction of the ozone gas and introducing only the inert gas into the reaction chamber, after the introduction. A capacitive dielectric film is formed on the lower electrode by an atomic layer deposition (ALD) method in the atom layer deposition apparatus. An upper electrode of the capacitor is formed on the capacitive dielectric film after the capacitive dielectric film is formed.
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