发明名称 |
Semiconductor devices and methods of fabricating the same |
摘要 |
One example embodiment of a semiconductor device includes a memory cell array formed on a substrate. The memory cell array includes a gate stack including alternating conductive and insulating layers. A first lower conductive layer in the gate stack has a portion disposed below a first upper conductive layer in the gate stack, and a first contact area of the first lower conductive layer is disposed higher than a second contact area of the first upper conductive layer. The semiconductor device further includes first and second contact plugs extending into the gate stack to contact the first and second contact areas, respectively.
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申请公布号 |
US8587052(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201213402171 |
申请日期 |
2012.02.22 |
申请人 |
YUN JANG-GN;SEOL KWANG-SOO;CHOI JUNGDAL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN JANG-GN;SEOL KWANG-SOO;CHOI JUNGDAL |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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