发明名称 |
Nonvolatile memory devices and programming methods thereof in which a program inhibit voltage is changed during programming |
摘要 |
Provided are nonvolatile memory devices and programming methods thereof. A non-volatile memory device is programmed by performing a plurality of programming loops on memory cells in a memory cell array and changing a program inhibit voltage applied to bit lines of the memory cells that have completed programming while performing the plurality of programming loops.
|
申请公布号 |
US8588002(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US20100830903 |
申请日期 |
2010.07.06 |
申请人 |
HAN JINMAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN JINMAN |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|