发明名称 |
Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM) |
摘要 |
Systems and methods to reduce source loading effects in STT-MRAM are disclosed. In a particular embodiment, a method includes determining a switching current ratio of a magnetic tunnel junction (MTJ) structure that enables stable operation of a memory cell. The memory cell includes the MTJ structure serially coupled to an access transistor. The method also includes modifying an offset magnetic field that is incident to a free layer of the MTJ structure. The modified offset magnetic field causes the MTJ structure to exhibit the switching current ratio.
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申请公布号 |
US8587993(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US20090396295 |
申请日期 |
2009.03.02 |
申请人 |
LEE KANGHO;KANG SEUNG H.;ZHU XIAOCHUN;QUALCOMM INCORPORATED |
发明人 |
LEE KANGHO;KANG SEUNG H.;ZHU XIAOCHUN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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