| 摘要 |
There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate 9 by introducing a hydrogen halide-containing gas into a vacuum chamber 1; a fluorine-containing gas-based etching step of etching the silicon substrate 9 by introducing a fluorine-containing gas into the vacuum chamber 1; a protective film formation step forming a protective film on the silicon substrate 9 by sputtering a solid material 15; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode 8. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order. |
