发明名称 |
System and method for shared sensing MRAM |
摘要 |
Resistance memory cells of MRAM arrays are designated as reference cells and programmed to binary 0 and binary 1 states, reference cells from one MRAM array at binary 0 and at binary 1 are concurrently accessed to obtain a reference voltage to read resistance memory cells of another MRAM array, reference cells from the other MRAM array at binary 0 and binary 1 are concurrently accessed to obtain a reference voltage to read resistance memory cells of the one MRAM array.
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申请公布号 |
US8587994(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201113177992 |
申请日期 |
2011.07.07 |
申请人 |
KIM JUNG PILL;KIM TAE HYUN;QUALCOMM INCORPORATED |
发明人 |
KIM JUNG PILL;KIM TAE HYUN |
分类号 |
G11C11/00;G11C7/02 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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