发明名称 |
Through-silicon via and fabrication method thereof |
摘要 |
A through silicon via (TSV) structure including a semiconductor substrate; a first inter-metal dielectric (IMD) layer on the semiconductor substrate; a cap layer overlying the IMD layer; a conductive layer extending through the cap layer, the first IMD layer and into the semiconductor substrate; a tungsten film capping a top surface of the conductive layer; a second IMD layer overlying the cap layer and covering the tungsten film; and an interconnect feature in the second IMD layer.
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申请公布号 |
US8587131(B1) |
申请公布日期 |
2013.11.19 |
申请号 |
US201213490472 |
申请日期 |
2012.06.07 |
申请人 |
HUANG CHI-WEN;SU KUO-HUI;NANYA TECHNOLOGY CORP. |
发明人 |
HUANG CHI-WEN;SU KUO-HUI |
分类号 |
H01L23/48;H01L21/4763;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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