发明名称 |
Three-dimensional mask model for photolithography simulation |
摘要 |
A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
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申请公布号 |
US8589829(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201313736929 |
申请日期 |
2013.01.08 |
申请人 |
LIU PENG;CAO YU;CHEN LUOQI;YE JUN;ASML NETHERLANDS B.V. |
发明人 |
LIU PENG;CAO YU;CHEN LUOQI;YE JUN |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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地址 |
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