发明名称 Film forming method and film forming apparatus
摘要 A film forming process is performed on a substrate in a deposition chamber. A first electrode is provided in the deposition chamber and is grounded. A second electrode is provided in the deposition chamber to face the first electrode. A radio frequency power supply supplies radio frequency power to the second electrode. A DC power supply supplies a DC bias voltage to the second electrode. A control unit adjusts a bias voltage to be less than the potential of the second electrode when the radio frequency power is supplied, but the bias voltage is not supplied. In this way, it is possible to improve film quality while preventing a reduction in the deposition rate of a film during deposition.
申请公布号 US8586484(B2) 申请公布日期 2013.11.19
申请号 US200913254458 申请日期 2009.12.16
申请人 MATSUYAMA HIDEAKI;WADA TAKEHITO;FUJI ELECTRIC CO., LTD. 发明人 MATSUYAMA HIDEAKI;WADA TAKEHITO
分类号 H01L21/31 主分类号 H01L21/31
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