| 摘要 |
A method for fabricating a layer including nickel monosilicide NiSi on a substrate including silicon. The method includes the steps of incorporating, on a portion of the thickness of the substrate comprising silicon, an element selected from W, Ti, Ta, Mo, Cr and mixtures thereof; depositing, on the substrate, a layer of nickel and a layer of an element selected from Pt, Pd, Rh, and mixtures thereof or a layer comprising both nickel and an element selected from Pt, Pd, Rh, and mixtures thereof; heating to a temperature sufficient for obtaining the formation of a layer comprising nickel silicide optionally in the form of nickel monosilicide NiSi; incorporating fluorine in the layer; and optionally, heating to a sufficient temperature to convert the layer to a layer comprising nickel silicide entirely in the form of nickel monosilicide NiSi.
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