发明名称 TEST STRUCTURE OF A SEMICONDUCTOR DEVICE, METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A test structure includes a transistor, a dummy transistor and a pad unit. The transistor is formed on a first active region of a substrate. The dummy transistor is formed on a second active region of the substrate and electrically connected to the transistor. The pad unit is electrically connected to the transistor. Plasma damage to the transistor is reduced due to the presence of dummy transistor.
申请公布号 KR101330084(B1) 申请公布日期 2013.11.18
申请号 KR20070071708 申请日期 2007.07.18
申请人 发明人
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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