| 摘要 |
A method for manufacturing a light emitting diode is provided to effectively emit light propagating toward a substrate to the outside by rubbing a superhard powder against a sidewall of the light emitting diode. A substrate(100) is prepared. A compound semiconductor layer including a lower semiconductor layer(210), an active layer(220), and an upper semiconductor layer(230) is formed on the substrate. The substrate with the compound semiconductor layer is diced in a chip unit. A surface of a sidewall of the diced substrate is rubbed with a superhard powder. The sidewall surface treatment includes a procedure for mixing the superhard powder with a solvent, a procedure for placing the diced substrate in an ultrasonic reactor, and a procedure for inputting the superhard powder mixed with the solvent into the ultrasonic reactor and then activating the superhard powder to perform a surface treatment of the sidewall surface of the substrate. |
