| 摘要 |
<p>The cell has semi-conductor material zones (5a, 5b) provided with access P-type metal oxide semiconductor transistors (1a, 1b) and P-type metal oxide semiconductor driver transistors (2a, 2b), respectively. One of the access transistors and one of the driver transistors are located at a side of a plane passing through electric nodes (F, S). The other access transistor and the other driver transistor are located at another side of the plane. A support substrate has counter electrodes, where connections of the counter electrodes and gate electrodes (7a, 7b) are arranged on both sides of plane.</p> |
