| 摘要 |
A thin film transistor device for an LCD(Liquid Crystal Display) and a method for manufacturing the same are provided to decrease the length of a channel part to less than the resolution of a mask and improve the current driving capability, thereby improving the picture quality. A gate electrode(211) is formed on a substrate(200). A gate insulating layer(201) is formed on the entire surface of the substrate to cover the gate electrode. A source electrode(221) is formed on the gate insulating layer. A semiconductor layer(230) and first and second ohmic contact layers(232,233) are formed on the resultant substrate. The semiconductor layer is in contact with the source electrode. The first ohmic contact layer is positioned at the interface between the source electrode and the semiconductor layer. The second ohmic contact layer is formed on the semiconductor layer. A drain electrode(251) is formed, wherein the drain electrode is in contact with the semiconductor layer, with the second ohmic contact layer therebetween. The source electrode and the drain electrode partially overlap with each other, with the semiconductor layer therebetween. The overlapping area of the source electrode and the drain electrode becomes a channel part(231) of the semiconductor layer. |
