| 摘要 |
A gate amplification triac including in a semiconductor substrate of a first conductivity type a vertical triac and a lateral bipolar transistor having its emitter connected to the triac gate, its base connected to a control terminal, and its collector connected to a terminal intended to be connected to a first reference voltage, the main terminal of the triac on the side of the transistor being intended to be connected to a second reference voltage, the transistor being formed in a first well of the second conductivity type and the triac comprising on the transistor side a second well of the second conductivity type, the first and second wells being formed so that the substrate-well breakdown voltage of the transistor is greater than the substrate-well breakdown voltage of the triac by at least the difference between the first and second reference voltages.
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