| 摘要 |
The invention relates to a direct-converting X-ray detector (C3, C5), particularly for use in CT systems (C1), at least having one semiconductor material (HL) used for detecting X-rays. The invention is characterized in that at least one side (S) of the semiconductor material (HL) facing away from the X-rays has a coating (B) in order to prevent penetration of rays into the semiconductor material (HL). The invention further relates to a CT system (C1), in which an X-ray detector (C3, C5) made from at least one detector element, preferably comprising at least one layer (1, 2, 3) according to the invention on the semiconductor material (HL) used for detection, can be used, with which tomographic recordings of an examination object can be created.
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