发明名称 MAGNETIC MATERIAL DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To reduce a current required for magnetization-switching of a magnetic material layer.SOLUTION: The magnetic material device has a laminate structure including a ground layer, a magnetic material layer, and a cap layer. Materials of the ground layer and the cap layer are different from each other. The magnetic material layer has: a magnetization free region having vertical magnetic anisotropy; and a first characteristic change region and a second characteristic change region positioned on both sides of the magnetization free region in a first plane inner direction. Vertical magnetic anisotropy of the first and second characteristic change regions is weaker than that of the magnetization free region. An external magnetic field containing a component of the first plane inner direction is applied to the magnetization free region. Also, a current in the first plane inner direction is supplied to the magnetization free region.
申请公布号 JP2013232497(A) 申请公布日期 2013.11.14
申请号 JP20120103288 申请日期 2012.04.27
申请人 RENESAS ELECTRONICS CORP 发明人 SUZUKI AKIHIRO;SUEMITSU KATSUMI;KARIYADA HIDETSUGU
分类号 H01L43/08;H01L21/8246;H01L27/105;H01L29/82;H01L43/12 主分类号 H01L43/08
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