发明名称 |
Through Silicon Via and Method of Forming the Same |
摘要 |
The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on a surface of the via opening. The barrier layer is disposed on a surface of the insulation layer. The buffer layer is disposed on a surface of the barrier layer. The conductive electrode is disposed on a surface of the buffer layer and a remainder of the via opening is completely filled with the conductive electrode. A portion of the buffer layer further covers a surface of the conductive electrode at a side of the second surface and said portion is level with the second surface. |
申请公布号 |
US2013299949(A1) |
申请公布日期 |
2013.11.14 |
申请号 |
US201313947125 |
申请日期 |
2013.07.22 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG KUO-HSIUNG;CHIOU CHUN-MAO;CHEN HSIN-YU;TSAI YU-HAN;YANG CHING-LI;CHENG HOME-BEEN |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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