SEMICONDUCTOR DEVICE FABRICATION METHOD

摘要

A semiconductor device fabrication method, comprising the steps of: forming a gate stack structure (3) on a substrate (1); forming a source/drain region (4) and a gate sidewall (5) on two sides of the gate stack structure (3); depositing a first metal layer (6) on the source/drain region (4); carrying out a first annealing so that the first metal layer (6) reacts with the source/drain region (4) to epitaxially grow and form a first metal silicide (7); depositing a second metal layer (8) on the first metal silicide (7); and carrying out a second annealing so that the second metal layer (8) reacts with the first metal silicide (7) and the source/drain region (4) to form a second metal silicide (9). According to the semiconductor device fabrication method, by epitaxially growing an ultrathin metal silicide on a source/drain region, the grain boundary between silicide grains is reduced or eliminated, and the metal diffusion rate and direction are limited, thereby inhibiting the lateral growth of the metal silicide and further improving the performance of the device.