COMPLEMENTARY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a complementary semiconductor device which achieves a CMOS structure using a Ge channel at a low temperature and at a low cost, enhances performance, and reduces power consumption.SOLUTION: A complementary semiconductor device using a Ge channel comprises: n-type first and second semiconductor layers 21 formed on an underlayer insulating film 12, and whose main component is Ge; an nMOSFET whose gate electrode 23 is formed on the first semiconductor layer 21 via a gate insulating film 22, and whose channel and source/drain are semiconductor layers of the same conductivity type; and a pMOSFET whose gate electrode 23 is formed on the second semiconductor layer 21 via the gate insulating film 22, and whose source/drain region is formed of an alloy layer 25 of the second semiconductor layer 21 and a metal.