| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which reduces read errors of data.SOLUTION: The semiconductor memory device includes: a first transistor 24 to which a voltage VHSA (which is first voltage VDD) is supplied and which can supply first current to a bit line; a detection section SEN which detects the current passing through the bit line and reads held data in a memory cell connected to the bit line; and a second transistor 30 which can transfer any one of the first voltage VDD and a second voltage VX2SA larger than the first voltage, to the detection section. The second transistor charges the detection section SEN to any one of the first voltage VDD and the second voltage VX2SA while passing the first current to the bit line. |
