| 摘要 |
Methods of removing residual polymer from vertical walls of a patterned dielectric layer are described. The methods involve the use of a gas phase etch to remove the residual polymer without substantially disturbing the patterned dielectric layer. The gas phase etch may be used on a patterned low-k dielectric layer and may maintain the low dielectric constant of the patterned dielectric layer. The gas phase etch may further avoid stressing the patterned low-k dielectric layer by avoiding the use of liquid etchants whose surface tension can upset delicate low-K features. The gas phase etch may further avoid the formation of solid etch by-products which cars also deform the delicate features. |
