| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a multiport memory, in which a leak current of memory cells in a standby mode is reduced so as to achieve low power consumption.SOLUTION: A semiconductor device includes a memory unit (MP1) that has a plurality of memory cells which are selected on the basis of a first port address (ADDA) and a second port address (ADDB); and a mode switching control circuit (MS_CTL1) that generates a first control signal (STB) on the basis of a first operation mode setting signal (RSA) and a second operation mode setting signal (RSB). The device controls, on the basis of the first control signal, a voltage of a cell power supply wiring that supplies a power supply voltage to the plurality of memory cells. |
