| 摘要 |
PROBLEM TO BE SOLVED: To provide a light reflection laminate having high reflection characteristics for the light in a region of wavelength of 300-800 nm, and to provide a semiconductor light-emitting device.SOLUTION: The light reflection laminate includes a resin composition layer A composed of a resin composition containing titanium oxide particles, and a resin composition layer B composed of a resin composition containing non-titanium oxide particles of at least any one of boron nitride particles, melamine cyanurate particles, aluminum oxide particles and magnesium oxide particles, in which the resin composition layer B and resin composition layer A are formed sequentially from the light incident side. The semiconductor light-emitting device includes an optical semiconductor element, and a reflector provided around the optical semiconductor element and reflecting light therefrom in a predetermined direction, formed on a substrate, and at least a part of the light-reflecting surface of the reflector is the light reflection laminate. |
