GLASS COMPOSITION FOR SEMICONDUCTOR JUNCTION PROTECTION, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

A glass composition for semiconductor junction protection, which contains at least SiO2, B2O3, Al2O3, ZnO and at least two alkaline earth metal oxides selected from among CaO, MgO and BaO, but does not substantially contain Pb, As, Sb, Li, Na and K. This glass composition for semiconductor junction protection has an average linear expansion coefficient within the range from 3.33 × 10-6 to 4.13 × 10-6 for the temperature range from 50°C to 550°C. A glass composition for semiconductor junction protection of the present invention enables the production of a semiconductor device having high withstand voltage with use of a glass material that contains no lead as in the cases where conventional "glass materials that are mainly composed of lead silicate" are used.