| 摘要 |
<p>The objective of the present invention is to suggest a semiconductor device which includes a thin film transistor with good electrical properties and reliability; and a manufacturing method to produce the semiconductor device with high productivity. As a semiconductor layer, an oxide semiconductor film including In, Ga, and Zn is used, and a thin film transistor of a reverse stagger (a bottom gate structure) where a buffer layer made of metal oxide between a semiconductor layer, a source electrode layer, and a drain electrode layer. By forming a metal oxide layer as a buffer layer between the source electrode layer, the drain electrode layer, and the semiconductor layer on purpose, ohmic contact is formed.</p> |
