SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable planarization of a surface of an interlayer insulation film without increasing an interface state density considerably between an insulation film and silicon carbide.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: forming a thermally-oxidized film and a gate insulation film 13 on a (000-1) face of a silicon carbide substrate 11; forming a gate electrode 14 on the gate insulation film 13; removing a part of the gate electrode 14 to form an opening; and forming an interlayer insulation film 17 at least at a part of the opening. When planarization of the interlayer insulation film 17 is performed by a reflow process, the reflow process is performed in an atmosphere using hydrogen or a mixed gas of an inert gas and hydrogen to include a state where the atmosphere is heated to at least 400°C and over.