SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which enables completion of etching to be easily determined when etching is performed on a nitride semiconductor layer.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a monitor layer 50 composed of Au and a Ni layer 24 composed of Ni in this order on a transparent semiconductor layer 18 (nitride semiconductor layer) which is provided on a first principal surface side of a substrate 10; a process of forming a mask layer 39 for selective etching, which has an opening on a second principal surface side of the substrate 10; a process of etching the transparent semiconductor layer 18 and the substrate 10 exposed in the opening of the mask layer 39 from the second principal surface side of the substrate 10; and a process of determining completion of etching by checking exposure of the Ni layer 24 in the opening of the mask layer 39.