| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device may include a first insulating layer disposed on a substrate, a gate electrode disposed on the first insulating layer, and a second insulating layer disposed on the gate electrode and the first insulating layer. The second insulating layer includes a first discharge site. |
| 申请公布号 |
US2013302964(A1) |
申请公布日期 |
2013.11.14 |
| 申请号 |
US201313765150 |
申请日期 |
2013.02.12 |
| 申请人 |
SAMSUNG ELECTRONICS., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG YONGKUK;CHAE SEUNG HO;HEO JUNG SHIK |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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