| 摘要 |
The invention describes a method for making electrical contact with an electronic component in the form of a stack (1) which is formed from a plurality of material layers (2), which react upon application of an electric field, and a plurality of electrode layers (3, 4), wherein each material layer (2) is arranged between two of the electrode layers (3, 4). In the method according to the invention, an insulation structure (7, 8) is generated on at least one stack circumferential region (5, 6) of the stack (1), as a result of which each second electrode layer (3, 4) of the at least one stack circumferential region (5, 6) is exposed for electrical contact to be made. Furthermore, a contact-making structure (13, 14) is applied to the at least one stack circumferential region (5, 6) which is provided with the insulation structure (7, 8). The method according to the invention is distinguished in that, before the step of generating the contact-making structure (13, 14), the material layers (2) are partially removed by means of a material-removing method in such a way that the electrode layers (3, 4) are exposed close to the surface. |
