| 摘要 |
<p>The invention relates to a method for producing at least one photosensitive infrared detector by assembling a first electronic component (100, 230) comprising a plurality of photodiodes (110) sensitive to infrared radiation and a second electronic component (400) comprising at least one electronic circuit for reading the plurality of photodiodes, the method being characterised in that it comprises: the production, on each of the first (100, 230) and second (400) components, of a connection surface (192, 492) formed at least partially by a layer (210, 405) containing silicon oxide (SiO2); and a step of adhering the first component (100, 230) and the second component (400) by means of the connection surfaces (192, 492) thereof, enabling the direct adhesion the two components (100, 230, 400). This method enables the simplification of the hybridisation of heterogeneous components for the production of an infrared detector. The invention also relates to an infrared detector and to an assembly for producing such a detector.</p> |
