THIN FILM TRANSISTOR DEVICE MANUFACTURING METHOD, THIN FILM TRANSISTOR DEVICE AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor device manufacturing method and the like which can form an oxide semiconductor film having a stable film quality.SOLUTION: A thin film transistor device manufacturing method comprises: a process (S11) of preparing a substrate; a process (S12) of forming a gate electrode on the substrate; a third process (S13) of forming an insulation layer on the gate electrode; a fourth process (S14) of stacking an oxide semiconductor layer on the insulation layer; a process (S18) of indirectly annealing the oxide semiconductor layer by heat generated by heating of the gate electrode by irradiation of the substrate with predetermined laser beams having a wavelength which penetrates the oxide semiconductor layer; a sixth process (S18) of forming a source electrode and a drain electrode in regions on the annealed oxide semiconductor layer, which correspond to the gate electrode. The insulation layer and the oxide semiconductor layer are formed to have respective film thicknesses to satisfy a predetermined conditional expression.