发明名称 SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which can make a cleavage line straight and can prevent a semiconductor layer from getting shorted with a radiation block, etc.SOLUTION: In a semiconductor element manufacturing method, a semiconductor wafer is cleaved along the crystal orientation of the semiconductor wafer to manufacture semiconductor elements. The manufacturing method comprises the steps of: forming a semiconductor layer on the semiconductor wafer; forming on the semiconductor layer an insulation film having an insulation film thinned region which is made thinner in parallel to the crystal orientation than the other; forming on the insulation film an electrode intersecting the insulation film thinned region; forming in the insulation film thinned region a flaw serving as the starting point of cleavage; cleaving the semiconductor wafer along the insulation film thinned region starting from the flaw; and sticking the electrode fast to a radiation block via solder after the semiconductor wafer is cleaved.
申请公布号 JP2013232672(A) 申请公布日期 2013.11.14
申请号 JP20130142651 申请日期 2013.07.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKAMURA HITOSHI;NEGISHI MASAHITO
分类号 H01L21/301 主分类号 H01L21/301
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