SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form an interlayer insulation film which can successfully coat an electrode.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: forming a gate oxide film 12 on a SiC substrate 11; forming a gate electrode 13 on the gate insulation film 12; forming an interlayer insulation film 15 on the gate electrode 13; and performing heat treatment on the interlayer insulation film 15. By forming a tapered face 13d on an end face of the gate electrode 13 and performing the heat treatment on the interlayer insulation film 15 at a temperature of 850°C and under, the interlayer insulation film 15 which follows the end face shape of the gate electrode 13 and which is flat and has good coatability can be formed without increasing a defect level at an interface between the SiC substrate 11 and the gate insulation film 12.