发明名称 |
Bump Structure for Stacked Dies |
摘要 |
A bump structure that may be used for stacked die configurations is provided. Through-silicon vias are formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon vias. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon vias. The isolation film is thinned to re-expose the through-silicon vias. Bump pads and redistribution lines are formed on the backside of the semiconductor substrate providing an electrical connection to the through-silicon vias. Another isolation film is deposited and patterned, and a barrier layer is formed to provide contact pads for connecting to an external device, e.g., another die/wafer or circuit board.
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申请公布号 |
US2013299992(A1) |
申请公布日期 |
2013.11.14 |
申请号 |
US201313943543 |
申请日期 |
2013.07.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG HUNG-PIN;HSU KUO-CHING;CHEN CHEN-SHIEN;CHIOU WEN-CHIH;YU CHEN-HUA |
分类号 |
H01L23/538 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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