发明名称 |
SEMICONDUCTOR DEVICE WITH STI AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes: a semiconductor substrate having first and second areas; an STI isolation region being made of an isolation trench formed in the semiconductor substrate and an insulating film burying the isolation trench and defining a plurality of active regions in the first and second areas; a first structure formed on an area from the active region in the first area to a nearby STI isolation region and having a first height; and a second structure formed on an area from the active region in the second area to a nearby STI isolation region and having a second height, wherein the surface of the said STI isolation region in the first area is lower than the surface of said STI isolation region in the second area. |
申请公布号 |
US2013299892(A1) |
申请公布日期 |
2013.11.14 |
申请号 |
US201313941778 |
申请日期 |
2013.07.15 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
EMA TAIJI;MIZUTANI KAZUHIRO |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|