DEPOSITION OF AN AMORPHOUS CARBON LAYER WITH HIGH FILM DENSITY AND HIGH ETCH SELECTIVITY

摘要

Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200°C and about 700°C to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200°C.