| 摘要 |
<p>A photovoltaic device (10) is provided with a photovoltaic layer (3) formed by laminating, in order, a p-type semiconductor layer (31), an i-type semiconductor layer (32), and an n-type semiconductor layer (33). The p-type semiconductor layer (31) comprises p-type thin silicon films (311 to 313). The p-type thin silicon films (311 and 312) use pulse power created by superimposing low-frequency pulse power from 100 Hz to 1 kHz on high-frequency power from 1 MHz and 50 MHz as plasma excitation power. The density of the high-frequency power is 100 to 300 mW/cm2, and the pressure during plasma processing is 300 to 600 Pa. Under conditions in which the substrate temperature during plasma processing is 140 to 190°C, thin silicon film having p-type conductivity is deposited, and thin silicon film is formed through nitriding. The p-type thin silicon film (313) is deposited under the abovementioned conditions.</p> |
