| 摘要 |
PROBLEM TO BE SOLVED: To achieve high density by a plain manufacturing process and reduce bit cost of a memory.SOLUTION: In a semiconductor storage device according to an embodiment, by connection of a resistance change material layer and a channel layer in series between a first diffusion layer and metal wiring, the metal wiring and the channel semiconductor layer are isolated. A semiconductor storage device according to another embodiment comprises a resistance change material layer which electrically connects channel semiconductor layers opposite to each other in a first direction with each other, and channel semiconductor layers adjacent to each other in a second direction with each other. The plurality of channel semiconductor layers are arranged in the second direction. |
