| 摘要 |
PROBLEM TO BE SOLVED: To provide higher shock resistance to a semiconductor device having a transistor using an oxide semiconductor; provide a semiconductor device which can respond to diversifying uses and which has improved convenience and high reliability.SOLUTION: A semiconductor device comprises: a bottom-gate transistor including a gate electrode layer, a gate insulation layer and an oxide semiconductor layer on a substrate; an insulation layer on the transistor; and a conductive layer on the insulation layer. The insulation layer covers the oxide semiconductor layer and is provided in contact with the gate insulation layer. In a channel width direction of the oxide semiconductor layer, an end of the gate insulation layer and an end of the insulation layer coincide with each other on the gate electrode layer. The conductive layer covers a channel formation region of the oxide semiconductor layer and the ends of the gate insulation layer and the insulation layer, and is provided in contact with the gate electrode layer. |
