发明名称 |
CAPACITOR AND METHOD FOR FABRICATING THE SAME |
摘要 |
A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type lower electrodes; defining a through hole that passes through portions of the first upper electrode and the support layer; removing the mold layer through the through hole and exposing the cylinder type lower electrodes; forming a second upper electrode to fill the through hole and spaces between the cylinder type lower electrodes; and forming a third upper electrode to connect the second upper electrode and the first upper electrode with each other.
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申请公布号 |
US2013299942(A1) |
申请公布日期 |
2013.11.14 |
申请号 |
US201213596007 |
申请日期 |
2012.08.27 |
申请人 |
PARK JONG-KOOK;CHO YONG-TAE |
发明人 |
PARK JONG-KOOK;CHO YONG-TAE |
分类号 |
H01L21/02;H01L29/92 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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