发明名称 METHOD FOR PRODUCING A FILM BY CU2ZNSNS4 SILAR
摘要 The present invention relates to a method for manufacturing a film of Cu2ZnSnS4 (CZTS) on a metal or metal oxide substrate by successive ion layer adsorption and reaction (SILAR), characterized by the fact that it comprises at least two cycles, each cycle comprising the following successive steps: immersion of the substrate in a cationic solution comprising copper sulfate (CuSO4), tin sulfate (SnSO4) and zinc sulfate (ZnSO4), referred to as the precursors; rinsing by immersion of the substrate in deionized water; immersion of the substrate in an anionic solution comprising sodium sulfide (Na2S); rinsing by immersion of the substrate in deionized water; the concentration ratio of the copper (Cu2+), zinc (Zn2+) and tin (Sn2+) cations and of the sulfur (S2-) anion is 1:1:1:1 or 1:0.5:0.5:1. The invention will be applicable more particularly in the photovoltaic field, especially for production of thin-film, especially nanostructured photovoltaic cells, such as the ETA (Extremely Thin Absorber) cell.
申请公布号 US2013302597(A1) 申请公布日期 2013.11.14
申请号 US201313889862 申请日期 2013.05.08
申请人 AUX ENE ALT COMMISSARIAT A L'ENERGIE ATOMIQUE ET 发明人 SANCHEZ SYLVIA;IVANOVA-HRISTOVA VALENTINA
分类号 C23C2/26 主分类号 C23C2/26
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