| 摘要 |
A memory device includes a substrate, first and second trench isolations, a plurality of line-type isolations, a first word line, and a second word line. The substrate comprises an active area that comprises source and drain regions. The first and second trench isolations extend parallel to each other. The plurality of line-type isolations define the active area together with the first and second trench isolations. The first word line extends across the active area. The first word line is formed in the substrate and adjacent to the first trench isolation. The first word line defines a first segment of the active area with the first trench isolation. The second word line extends across the active area. The second word line is formed in the substrate and adjacent to the second trench isolation. The second word line defines a second segment of the active area with the second trench isolation. The size of the first segment is substantially equal to the size of the second segment.
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