发明名称 SUBSTRATE TREATING METHOD, STACK AND SEMICONDUCTOR DEVICE
摘要 A method that includes, in the sequence set forth, (1) temporarily fixing a substrate onto a support via a temporary fixing material including a central section (A) having two or more layers and a peripheral section (B) with solvent resistance, section (B) being in contact with a peripheral portion of the support on the substrate side and with a peripheral portion of the substrate on the support side, section (A) being in contact with a central portion of the support on the substrate side and with a central portion of the substrate on the support side, the temporary fixing thus resulting in a stack in which section (A) is covered with the support, section (B) and the substrate; (2) processing the substrate and/or transporting the stack; (3) dissolving section (B) with a solvent; and (4) heating the residue of the temporary fixing material and separating the substrate from the support.
申请公布号 US2013299946(A1) 申请公布日期 2013.11.14
申请号 US201313874489 申请日期 2013.05.01
申请人 JSR CORPORATION 发明人 TAKAHASHI SEIICHIROU;GOTOU HIROFUMI
分类号 H01L21/02;H01L29/02 主分类号 H01L21/02
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