| 摘要 |
A device is disclosed. The device includes a gate disposed on a substrate in a device region, the gate having first and second sidewalls. The gate includes a gate electrode and a resistive layer disposed between the gate electrode and substrate. First doped regions of a first polarity type are disposed in the substrate adjacent to the first and second sidewalls of the gate. The gate overlaps the first doped regions by a first distance to form overlap portions. A portion of the resistive layer between the gate electrode and overlap portions form first and second storage elements of a multi-bit resistive memory cell. |
