| 摘要 |
<p>The invention relates to a chemical vapour deposition process and to a reactor for a chemical vapour deposition process In an aspect, the invention relates to a chemical vapour deposition process for preparing a layer of a solid material on a substrate, comprising: passing a gas flow comprising a precursor of the solid material through a gas flow pathway and over the substrate, wherein a control of the gas flow over the substrate mitigates effects on the gas flow of accretion of said solid material on a boundary surface of the gas flow path way by adjusting, while the gas flow is passed over the substrate, a dimension of the gas flow pathway upstream, downstream and/or at the substrate.</p> |
