发明名称 SEMICONDUCTOR DEVICE
摘要 Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.
申请公布号 EP2661775(A1) 申请公布日期 2013.11.13
申请号 EP20120708058 申请日期 2012.01.04
申请人 ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) 发明人 KIS, ANDRAS;RADISAVLJEVIC, BRANIMIR
分类号 H01L29/786;H01L29/66 主分类号 H01L29/786
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