发明名称 Method for manufacturing a film of Cu2ZnSnS4 by SILAR
摘要 The process comprises immersing a substrate made of metal or metal oxide in precursors such as a cationic solution comprising copper sulfate, tin sulfate and zinc sulfate for 15-25 seconds, rinsing the substrate by immersing in deionized water for >= 15 seconds, immersing the substrate in an anionic solution comprising sodium sulfide, and rinsing the substrate by immersing in the deionized water. A ratio of concentrations of copper, zinc and tin cations and sulfur anions is 1:1:1 or 1:0.5:0.5:1. A concentration of precursors in cationic solutions is 5-20 mM. The process comprises immersing a substrate made of metal or metal oxide in precursors such as a cationic solution comprising copper sulfate, tin sulfate and zinc sulfate for 15-25 seconds, rinsing the substrate by immersing in deionized water for >= 15 seconds, immersing the substrate in an anionic solution comprising sodium sulfide, and rinsing the substrate by immersing in the deionized water. A ratio of concentrations of copper, zinc and tin cations and sulfur anions is 1:1:1 or 1:0.5:0.5:1. A concentration of precursors in cationic solutions is 5-20 mM, and the concentrations of copper sulfate, tin sulfate and zinc sulfate are 10 mM. A concentration of sodium sulfur in the anionic solution is 10 mM. The cationic and/or anionic solution is an aqueous solution. The cationic solution has a pH of 5, and the anionic solution has a pH of 12. The substrate is annealed at 400[deg] C under neutral atmosphere. The substrate comprises zinc oxide nanofibers. Independent claims are included for: (1) a nanostructured surface coated with a homogeneous film; and (2) metal oxide nanowires coated with the homogeneous film.
申请公布号 EP2662899(A1) 申请公布日期 2013.11.13
申请号 EP20130166835 申请日期 2013.05.07
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 SANCHEZ, SYLVIA;IVANOVA-HRISTOVA, VALENTINA
分类号 H01L31/032;B82Y30/00;B82Y40/00;C23C18/12;C23C26/00 主分类号 H01L31/032
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